Light-emitting device and method for producing light emitting device

ABSTRACT

A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Division of application Ser. No. 12/326,538 filedDec. 2, 2008; the entire contents of which are incorporated herein byreference.

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2007-315436, filed on Dec. 6,2007; the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a light-emitting device and a method forproducing a light-emitting device.

2. Background Art

By improvement of characteristics of nitride light-emitting device,light equipment using a semiconductor light-emitting device has becomepossible. For further expanding lighting purpose, improvement of opticaloutput and light-emitting efficiency of the light emitting device hasbeen required. Moreover, in lighting purpose, high mass productivity isrequired.

As a substrate for performing crystal growth of a nitride light-emittingdevice, sapphire of insulator material or the like is often used.However, if an insulator substrate, it is difficult to set the verticaldirection to the substrate to be a current pathway, and its currentpathway becomes through high serial resistance along a surface parallelto the substrate. Therefore, the light-emitting efficiency lowers. Onthe other hand, if the nitride semiconductor substrate havingconductivity is used, low resistance is possible but growth in size ofthe substrate is difficult and mass productivity is insufficient.

There is a technique disclosure example about a III-V group compoundsemiconductor device having high light-emitting efficiency and a methodfor producing the device (JP-A 2006-135026 (Kokai)). In this disclosureexample, there is disclosed a method for producing a light-emittingdevice, including bonding a ground substrate in which a laminated bodyof III-V group compound semiconductor is formed and a semiconductorsubstrate in which a laminated body containing metal layer is formed andthen removing the ground substrate.

However, even if the technique disclosure example is used, it is notsufficient for the light-emitting device and the producing method whichhave characteristics and mass productivity satisfying requirement oflight purpose.

SUMMARY OF THE INVENTION

According to an aspect of the invention, there is provided a method forproducing a light-emitting device, including: performing, on a firstsubstrate made of III-V group compound semiconductor, crystal growth ofa laminated body including an etching easy layer contiguous to the firstsubstrate and a light-emitting layer made of nitride semiconductor;bonding a second substrate and the laminated body; and detaching thesecond substrate provided with the light-emitting layer from the firstsubstrate by, one of removing the etching easy layer by using a solutionetching method, and removing the first substrate and the etching easylayer by using mechanical polishing method.

According to another aspect of the invention, there is provided a methodfor producing a light-emitting device, including: performing, on a firstsubstrate made of III-V group compound semiconductor, crystal growth ofa laminated body including an etching easy layer contiguous to the firstsubstrate and a light-emitting layer made of nitride semiconductor;bonding a second substrate and the laminated body; detaching the secondsubstrate provided with the light-emitting layer from the firstsubstrate by, one of removing the etching easy layer by using a solutionetching method, and removing the first substrate and the etching easylayer by using mechanical polishing method; bonding one surface of thelaminated body in a side in which the etching easy layer is removed to athird substrate; detaching the other surface of the laminated bodybonded to the third substrate from the second substrate and bonding theother surface to a fourth substrate having conductivity; and detachingthe one surface of the laminated body bonded to the fourth substratefrom the third substrate.

According to an aspect of the invention, there is provided alight-emitting device including: a first laminated body in which, alaminated body made of III-V group compound semiconductor containing alight-emitting layer, a conductive transparent electrode, and a firstmetal layer, are sequentially provided; and a second laminated bodyhaving a semiconductor substrate and a second metal layer provided onthe semiconductor substrate. The first metal layer and the second metallayer are bonded, and a radiant light from the light-emitting layerpasses through the transparent electrode, are reflected by the firstmetal layer, and are taken out to the outside.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart of a method for producing a light-emitting deviceaccording to the invention;

FIGS. 2A-2D are process sectional views of the method producing alight-emitting device according to the first embodiment;

FIG. 3 is a schematic sectional view of the light-emitting device basedon the first embodiment;

FIGS. 4A and 4B are process sectional views showing a method forproducing a light-emitting device according to a second embodiment;

FIG. 5 is a schematic sectional view of the light-emitting device basedon the second embodiment; and

FIGS. 6A to 6F are process sectional views showing a method forproducing a light-emitting device according to a third embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of this invention will be explained withreference to drawings.

FIG. 1 is a flow chart of a method for producing a light-emitting deviceaccording to this invention. Crystal growth of a laminated bodyincluding an etching easy layer and a light-emitting layer made ofnitride semiconductor is performed on a first substrate made of GaP,GaAs, GaAlAs, or the like (S100). The laminated body has a structure ofcontrolling spread of light to the vertical direction to the substrateby sandwiching the light-emitting layer by layers having differentrefractive indices therefrom, and crystal growth of such as structure isperformed.

By opposing and bonding a surface of the laminated body and the secondsubstrate, the first substrate and the second substrate are joined(S102). As the joining process, there is a method by using thermaltreatment or adhesive sheet. Moreover, as the second substrate, amaterial such as Si or ZnO (zinc oxide) or sapphire is possible, or amaterial in which a metal layer provided thereon is possible.

Subsequently, by using a chemical etching method or a mechanicalpolishing method, the etching easy layer is removed and the firstsubstrate and the second substrate are detached (S104). One electrode isformed on the laminated body, and the other electrode is formed on theback surface of the second substrate (S106).

Subsequently, dicing and chip detachment are performed (S108), the chipis mounted in a package, and electrical connection is performed by wirebonding, sealing is performed by using resin or the like, and thereby,the process is ended (S110).

As described above, in the method for producing a light-emitting deviceaccording to this embodiment, crystal growth of the nitridesemiconductor is performed on such a substrate as GaP, GaAs, and GaAlAs,which have thermal expansion coefficients near to that of GaN. Thethermal expansion coefficients are 5.9×10⁻⁶/K in GaP and 6.0×10⁻⁶/K inGaAs, which are near to 5.6×10⁻⁶/K of GaN, and good crystal growth ofnitride semiconductor is possible. That is, crack can be prevented frombeing generated in the crystal growth layer after the crystal growth,and warpage of the wafer can be reduced. By contrast, thermal expansioncoefficients are 2.5×10⁻⁶/K in Si, 4.2×10⁻⁶/K in 6H—SiC, and 4.8×10⁻⁶/Kin ZnO, which are separate from GaN, and it is difficult for thesubstrates thereof to hold good crystallinity.

Moreover, both GaN and GaP are III-V group compound semiconductors andhave crystal polarities dependent on the plane orientations. Therefore,in crystal growth of a GaN semiconductor, it is important to controlsuch a crystal polarity as N plane or Ga plane to the growth direction.If a semiconductor having no crystal polarity such as sapphire is usedas the substrate, it becomes difficult to control crystal polarity ofthe crystal growth film, and density of crystal defects is enhanced. Bycontrast, it is more preferable to use GaP because by appropriatelyselecting plane orientation, the control of crystal polarity becomeseasy and the defect density is reduced and a light-emitting layer havingbetter crystallinity can be formed.

Furthermore, for detaching the laminated body crystal-grown on thesapphire substrate from the sapphire substrate, a complex process suchas melting a buffer layer such as GaN by irradiating a laser lightthereto becomes required. By contrast, if III-V group compoundsemiconductor such as GaP substrate, GaAs substrate, or GaAlAs substrateis used, the detachment process can be simple by sandwiching a crystalgrowth layer that can be easily removed by a chemical etching methodsuch as solution method. Moreover, because the crystal growth layer thatis softer than the nitride semiconductor, the first substrate can beeasily detached by a mechanical polishing method from the secondsubstrate provided with the light-emitting layer.

On the other hand, the substrate made of nitride semiconductor has anextremely high melt point, and also, equilibrium vapor pressure ofnitrogen is extremely high, and therefore, bulk crystal growth from themelt is difficult, and it is difficult to enlarge its diameter.

By contrast, according to a method for producing a light-emitting deviceof this embodiment, the light-emitting layer of good crystallinity isformed on a large-diameter substrate made of GaP or AlGaAs and bondedonto another conductive substrate, and the substrate used for crystalgrowth is detached. That is, the mass productivity is large.

FIGS. 2A-2D are process sectional views of the method producing alight-emitting device according to the first embodiment. In theschematic view of FIG. 2A, on a GaP substrate (the first substrate) 20,there is formed a laminated body 39 in which sequential crystal growthof, an etching easy layer 22 (thickness: 0.5-several μm) made of atleast any one of Al_(x)Ga_(1-x)P (0<x<1) and In_(x)Ga_(1-x)P (0<x<1) andGaAs_(x)P_(1-x) (0<x<1), a GaP buffer layer 24, a GaN low-temperaturegrowth buffer layer 26, an n-type GaN buffer layer 28, an n-type InGaAlNcladding layer 30 (thickness: 0.5-1.0 μm), a light-emitting layer 32(thickness: 0.05-0.2 μm) made of InGaAlN MQW (Multi Quantum Well) layer,a p-type InGaAlN cladding layer 34 (thickness: 0.5-1.0 μm), a p-type GaNlayer 36 (thickness: 0.1-0.4 μm), and a contact layer 38 made of p⁺-typeGaN.

As the crystal growth method, MOCVD (Metal-Organic Chemical VaporDeposition) method, MBE (Molecular Beam Epitaxy) method, vapor growthmethod, liquid growth method, and so forth can be used.

When the AlGaP etching easy layer 22 and the GaP buffer layer 24 areformed on the GaP substrate 20 by using the liquid growth method or thelike, gas control system of GaP becomes needless in the MOCVD apparatusby which crystal growth of nitride semiconductor is performed. Moreover,in MOCVD method, GaP growth temperature is lower than 1000° C. and thegrowth temperature of the nitride semiconductor growth is higher than1000° C. Therefore, when the AlGaP etching easy layer 22 and the GaPbuffer layer 24 are formed by the liquid growth method, the MOCVDcrystal growth temperature can be adapted for nitride semiconductor, andproductivity can be enhanced. Of course, the laminated body 39 may beformed by MOCVD method or MBE method.

Moreover, as shown in FIG. 2B, on the contact layer 38, a transparentelectrode 40 made of n-type ZnO or ITO (Indium Tin Oxide) or the likeand an AuGe metal layer (first metal layer) 42 is further formed. In thefirst metal layer 42, Au metal layer may be formed contiguously to thetransparent electrode 40 and an AuGe metal layer may be laminatedthereon.

On the other hand, as shown in FIG. 2C, in the second substrate 50 madeof n-type Si having about the same size as the first substrate 20, an Aumetal layer (second metal layer) 52 is provided, and thereby, a secondlaminated body 53 is composed. Joining by bonding is performed byopposing the Au metal layer 52 and AuGe metal layer 42. The heattreatment condition of the junction is, for example, 500° C. for 1 hour.By further applying pressure, joining can be more certainly performed.Melt point of AuGe eutectic solder is in the vicinity of 360° C., andgood junction can be obtained by holding the layers in theabove-described heat treatment condition for an adequate time. Moreover,it is more preferable that joining is performed in a vacuum atmospherebecause in the junction, voids are suppressed. The AuGe metal layer maybe a surface of metal layer 52.

Subsequently, as shown in FIG. 2D, by using a solution etching method ora mechanical polishing method, GaP substrate 20 is detached. Forexample, because the etching easy layer 22 (thickness: for example,0.5-several μm) containing Al such as AlGaP has higher etching rate thanthose of the GaP substrate 20 and the GaP buffer layer 24 and nitridesemiconductor, if hydrochloric acid, nitric acid, or mixed solutionthereof is used, the etching easy layer 22 can be easily removed.

On the other hand, the nitride semiconductor is hard. That is, in GaN,Young's modulus is about 2.9×10¹¹ N/m² which is higher than that ofIII-V group compound semiconductor containing no nitrogen such as GaAsor GaAlAs. Therefore, it is also easy that by using a mechanicalpolishing method, the first substrate 20 and the etching easy layer 22are removed and the second substrate 50 to which the laminated bodycontaining the light-emitting layer 32 is bonded is detached.

Subsequently, by using the mechanical polishing method or the solutionetching method, the GaP buffer layer 24 and the GaN low-temperaturegrowth buffer layer 26 are removed. The GaP buffer layer 24 and the GaNlow-temperature growth buffer layer 26 does not contain Al, andtherefore, can suppress oxidation and can be a nitride laminated body ofgood crystallinity. By containing no Al, the solution etching rate islower than AlGaP, but generally, they are thinner than the etching easylayer 22, and therefore, can be easily removed by a solution etching ora mechanical polishing method.

If the first substrate 20 is made of GaAs, the etching easy layer 22 ismade of, for example, Al_(y)Ga_(1-y)As (0<y<1), and the etching easylayer 22 can be removed, for example, by using an etching solutioncontaining acid.

In FIG. 2D, in one side, there is a first laminated body 45 in which, alaminated body 44 that is the laminated body 39 from which the etchingeasy layer 22 and the GaP buffer layer 24 and the GaN low-temperaturegrowth buffer layer 26 are removed, a transparent electrode 40, and anAuGe metal layer 42, are sequentially laminated. And, in the other side,there is a second laminated body 53, its state is that the AuGe metallayer 42 of the first laminated body 45 and the Au metal layer 52 of thesecond laminated body 53 are bonded.

FIG. 3 is a schematic sectional view of the light-emitting deviceaccording to the method for producing a light-emitting device accordingto this embodiment. By bonding the first laminated body 45 and thelaminated body 53, forming a first electrode 60 on the surface fortaking out the light and forming a second electrode 62 on a back surfaceof the second substrate 50 and performing division into chips, alight-emitting device of FIG. 3 is produced. The light passing throughthe transparent electrode 40 out of the radiant light (dashed line ofellipse) from the light-emitting layer 32 is reflected by the AuGe metallayer and taken out to the outside.

The ultraviolet to green light radiated from the nitride semiconductoris absorbed to Si, and therefore, it is preferable that the first metallayer 42 made of at least AuGe metal layer or the like is provided tosuppress absorption in the second substrate 50 made of Si or the like tomake high light-emitting efficiency.

In the producing method of this embodiment, it is not necessary toprovide the transparent electrode 40 made of ZnO or ITO. However,because an alloy of the compound semiconductor forming the laminatedbody 39 and Au or AuGe absorbs the radiant light and lowers thereflectance, the light-emitting efficiency can be higher as alloying issuppressed by the transparent electrode 40 to hold the reflectance to behigher.

Moreover, if n-type ZnO is used as the transparent electrode 40,low-resistance ohmic contact is formed in pn junction between thecontact layer 38 and the transparent electrode 40, and therefore, theoperation current flows in the vertical direction through the n-type Sisubstrate 50 having conductivity and the power loss is reduced, in thelight-emitting device.

FIGS. 4A and 4B are process sectional views showing a method forproducing a light-emitting device according to a second embodiment.Moreover, FIG. 5 is a schematic sectional view of the light-emittingdevice using this producing method. In FIG. 4A, the laminated body 39formed on the GaP substrate 20 has the same structure as FIG. 2Arepresenting the first embodiment. The contact layer 38 composing thesurface of the laminated body 39 and the surface of the second substrate51 made of n-type ZnO layer having about the same size as the GaPsubstrate 20 are opposed and directly bonded and heated, and thereby,joining is performed. The heat treatment condition of the junction is,for example, 600-800° C. for 1 hour. By further applying pressure,joining can be more certainly performed. In this case, it is notnecessary to provide metal layers for junction on the surface of thelaminated body 39 and on the surface of the second substrate 51.

In this heat treatment process, Ga composing the contact layer 38 isdiffused to an n-type ZnO layer, and Zn composing an n-type ZnO layer isdiffused to the contact layer 38. Therefore, it is preferable that thedonor concentration of n-type ZnO is 5×10¹⁸ cm⁻³ or more becausedepleted layer width of the pn junction becomes narrow and the tunnelcurrent becomes large, and 5×10¹⁹ cm⁻³ is more preferable. Similarly, itis preferable that the acceptor concentration of the contact layer 38 is5×10¹⁸ cm⁻³ or more, and 5×10¹⁹ cm⁻³ is more preferable. As describedabove, this interface operates as the ohmic contact.

FIG. 4B is a process of detaching the GaP substrate 20. In this process,similarly to FIG. 2D representing the first embodiment, the etching easylayer 22, the GaP buffer layer 24, and the GaN low-temperature growthbuffer layer 26 are sequentially removed. The state is that on then-type ZnO, a laminated body 44 whose surface is the n-type GaN bufferlayer 28 is left.

On the n-type GaN buffer layer 28, the first electrode 60 is formed, andon the back surface of the second substrate 51 made of n-type ZnO, thesecond electrode 62 is formed, respectively, and thereby, thelight-emitting device shown in FIG. 5 is completed. Because the band gapwavelength of ZnO is about 368 nm, the radiant light from thelight-emitting layer 32 is not absorbed and passed therethrough. In thesecond substrate 51, the light moving to the lower direction out of theradiant light (dashed line of ellipse) from the light-emitting layer 32made of nitride semiconductor is passed therethrough, and loss isreduced by the second electrode 62 and therewith the light is reflectedand passed to the above. Therefore, the light-emitting device havinghigh light-emitting efficiency can be obtained. Because the band gapwavelength of GaP is about 550 nm, GaP absorbs the radiant light in thewavelength range of ultraviolet to green from the light-emitting layer32.

FIGS. 6A to 6F are process sectional views showing a method forproducing a light-emitting device according to a third embodiment. Thelaminated body 39 on the GaP substrate 20 shown by FIG. 6A is the sameas FIG. 2A. For example, an adhesive sheet 82 made of resin or the likeis attached to the surface of the second substrate 54. The surface ofthe contact layer 38 composing the surface of the laminated body 39 andthe surface of the adhesive sheet 82 are opposed and bonded.

FIG. 6B shows a process of detaching the GaP substrate 20. In the samemethod as FIG. 2D, the etching easy layer 22, the GaP buffer layer 24,and the GaN low-temperature growth buffer layer 26 are sequentiallyremoved. On the second substrate 54, the state is that the laminatedbody 44 whose one surface 44 a is the n-type GaN buffer layer 28 isleft.

FIG. 6C shows a process of adhering a third substrate 55 made ofsapphire having larger size than that of the laminated body 44 in theside from which the GaP substrate 20 is detached. That is, the surfaceof an adhesive sheet 83 and the one surface 44 a of the laminated body44 are opposed and bonded.

Then, as shown in FIG. 6D, the other surface 44 b of the laminated body44 and the second substrate 54 to which the adhesive sheet 82 is adheredare detached.

In FIG. 6E, the other surface 44 b of the laminated body 44 and a fourthsubstrate 56 made of n-type ZnO having about the same size as thelaminated body 44 are opposed and bonded and subjected to heattreatment. Furthermore, as shown in FIG. 6F, the one surface 44 a of thelaminated body 44 bonded to the fourth substrate 56 and the thirdsubstrate 55 to which the adhesive sheet is adhered are detached.

When crystal growth of the nitride semiconductor is performed in 1000°C. or more, an ammonium gas having high corrosion is used. It cannot besaid that the ZnO substrate is robust, but the ZnO substrate isoccasionally degraded. In this embodiment, without using ZnO as thesubstrate for crystal growth, the GaP substrate 20 is used, it is easyto suppress degradation of the substrate.

Moreover, by using a sapphire substrate as the second substrate 53, thedetachment process of the GaP substrate 20 can be more certainlyperformed. That is, when the etching easy layer 22 such as AlGaP isetched with a solution, the n-type ZnO is occasionally etched accordingto acid solution. By contrast, if sapphire is used, the substrateetching with a solution can be suppressed. Moreover, when the GaP bufferlayer 24 or the GaN low-temperature buffer layer 26 or the like ismechanically polished, sapphire is robust. The sapphire substrates 53and 54 and the laminated body 44 are bonded by the adhesive sheets 82and 83, and therefore, can be easily removed.

In FIG. 6D, when the second substrate 54 is detached, if the thicknessof the laminated body 44 is sufficient, the third substrate 55 is notrequired, but generally, the laminated body 44 is thin and themechanical strength is insufficient, and therefore, the third substrate55 is used as the strengthening substrate. Eventually, for obtainingFIG. 6F, the second substrate 54 and the third substrate 55 that aremade of, for example, sapphire are used and the processes increases, butthe light-emitting device can be more certainly. The second and thirdsubstrates 54, 55 can be used again and the material efficiency can beimproved.

The adhesive sheets 82, 83 and the sapphire substrates 54, 55 can beeasily jointed by adhesive or heating, the joining process is simple.The light-emitting device that can be formed by the method for producinga light-emitting device according to the third embodiment becomes aboutthe same as the schematic sectional view shown in FIG. 5.

Next, characteristics of the light-emitting device using the method forproducing a light-emitting device according to this embodiment will, beexplained.

In the laminated body grown in the sapphire substrate, current flowsalong the substrate in the thin light-emitting layer of, for example,several μm. The sheet resistance of the thin light-emitting layerbecomes high, and in 100 mA or more of operation current, heatgeneration becomes large and light-emitting efficiency lowers. Moreover,as the current is larger, the current more easily becomes nonuniform,and lowering of the light-emitting efficiency are more promoted with lowthermal conductivity of sapphire.

By contrast, in the light-emitting device obtained by the method forproducing a light-emitting device according to first to thirdembodiments, the current flows in the vertical direction to thesubstrate and therefore the serial resistance is reduced and electricpower loss can be reduced. Therefore, 100 mA or more of operationcurrent, high optical output, and high light-emitting efficiency arepossible. Moreover, because the first electrode 60 and the secondelectrode 62 are placed above and below and the current can be flowed inthe vertical direction, down-sizing of the chip becomes easy, andreduction of the price becomes possible.

As shown in FIG. 3, if the laminated body 44, the transparent electrode40, the metal layer 42, and the second substrate 50 are sequentiallylaminated, alloying of the laminated body 44 and the AuGe metal layer(the first metal layer) 40 is suppressed and the reflectance in thefirst metal layer 40 can be enhanced and the light-emitting efficiencycan be improved. In FIG. 3, the second substrate 50 is not limited toSi, and compound semiconductor is also possible.

Furthermore, as shown in FIG. 5, if the laminated body 44 is bonded tothe second substrate 51 made of n-type ZnO, alloying of the secondelectrode 62 and the laminate body 44 can be suppressed, and thereflectance by the second electrode can be held and the light-emittingefficiency can be improved.

When the light-emitting efficiency is improved and a large number ofdown-sized light-emitting devices are arranged, realization of alighting apparatus having high light intensity becomes easy. Forexample, a white light source instead of the fluorescent material,bulb-color light sources having rich color rendering properties, ahigh-intensity lamp, a large-size full color display apparatus, and soforth are possible.

In this specification, “nitride semiconductor” represents asemiconductor represented by a composition formula ofB_(x)In_(y)Ga_(z)Al_(1-x-y-z)N (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z+1) andincludes the semiconductor to which an impurity is added for controllingconductivity type.

As described above, with reference to drawings, embodiments of theinvention have been explained. However, the invention is not limited tothe embodiments. With respect to size, shape, arrangement, processcondition, and so forth of the first substrate, the second substrate,the third substrate, the fourth substrate, the laminated body made ofsemiconductor, the first laminated body, the second laminated body, theadhesive sheets, the metal layers, the transparent electrode materials,and the transparent electrode which compose this invention, if designmodification is performed by those skilled in the art, such modifiedinvention is also included in the scope of this invention as long as notdeparting from the spirits of this invention.

The invention claimed is:
 1. A light-emitting device comprising: a firstlaminated body in which, a laminated body made of III-V group compoundsemiconductor containing a light-emitting layer, a conductivetransparent electrode, and a first metal layer, are sequentiallyprovided; and a second laminated body having a semiconductor substrateand a second metal layer provided on the semiconductor substrate, thefirst metal layer and the second metal layer being bonded, and a radiantlight from the light-emitting layer passing through the transparentelectrode, being reflected by the first metal layer, and being taken outto the outside.
 2. The device according to claim 1, wherein thelight-emitting layer is made of nitride semiconductor, and thesemiconductor substrate is made of Si.
 3. The device according to claim2, wherein the first metal layer has at least any one of AuGe and Au,and the second metal layer has at least any one of Au and AuGe.
 4. Thedevice according to claim 3, wherein the transparent electrode has atleast any one of ITO and n-type ZnO.
 5. The device according to claim 1,wherein the first metal layer has at least any one of AuGe and Au, andthe second metal layer has at least any one of Au and AuGe.
 6. Thedevice according to claim 1, wherein the first metal layer and thesecond metal layer are joined.
 7. The device according to claim 1,wherein at least one of the first metal layer and the second metal layeris a eutectic solder.
 8. The device according to claim 1, wherein thefirst laminated body is formed on a substrate and removed after thefirst metal layer and the second metal layer is bonded.
 9. The deviceaccording to claim 1, wherein an etching easy layer contiguous to thesubstrate is formed between the substrate and the light-emitting layer,and the substrate is removed from the first laminated body by removingthe etching easy layer.